Publications
1. R. N. Lokesh, L. Balakrishnan, K. Jeganathan, Samar Layek, H. C. Verma and N. Gopalakrishnan (2014): Role of surface functionalization in ZnO:Fe nanostructures, Mater. Sci. Eng. B, (In Press).
2. P. Sundara Venkatesh, S. Balakumar and K. Jeganathan (2014): Post annealing effects on the structural and optical properties of vertically aligned undoped ZnO nanorods grown by radio frequency magnetron sputtering, RSC Advances, 4, 5030–5035.
3. P. Sundara Venkatesh, C. L. Dong, C. L. Chen, W. F. Pong, K. Asokan and K. Jeganathan (2014): Local electronic structure of ZnO nanorods grown by radio frequency magnetron sputtering, Mater. Lett., 116, 206–208.
4. P. Jayabal, V. Sasirekha, J. Mayandi, K. Jeganathan, V. Ramakrishnan (2014): A facile hydrothermal synthesis of SrTiO3 for dye sensitized solar cell application, J. Alloy, Compd., 586, 456–461.
5. C. Gopalakrishnana, S. Ramaswamy, K. R. Ganesh, and K. Jeganathan (2014): Influence of low energy Ar-ion bombardment on monolayer Ni/W(100), Physica E, 56, 337–341.
6. P. Sundara Venkatesh, V. Ramakrishnan, and K. Jeganathan (2013): Investigations on the growth of manifold morphologies and optical properties of ZnO nanostructures by radio frequency magnetron sputtering, AIP Advances, 3, 082133.
7. P. Dharmaraj, K. Jeganathan, V. Gokulakrishnan, P. Sundara Venkatesh, R. Parameshwari, V. Ramakrishnan, S. Balakumar, K. Asokan, and K. Ramamurthi (2013): Controlled and Selective Area Growth of Mono Layer Graphene on 4H-SiC Substrate by Electron Beam Assisted Rapid Heating, J. Phys. Chem. C, 117, 19195−19202 SI
8. P. Sangeetha, K. Jeganathan, and V. Ramakrishnan (2013): Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111) substrate, AIP Advances, 3, 062114.
9. V. Purushothaman, and K. Jeganathan (2013): Investigations on the role of Ni-catalyst for the VLS growth of quasi-aligned GaN nanowires by chemical vapor deposition, J. Nanopart. Res., 15, 1789.
10. P. Sundara Venkatesh, V. Ramakrishnan, and K. Jeganathan (2013): Investigations on the growth and optical properties of one dimensional ZnO nanostructures grown by radio frequency magnetron sputter deposition,Mater. Res. Bull., 48, 3811 - 3816.
11. V. Purushothaman, and K. Jeganathan (2013): Structural Evolution and Growth Mechanism of Self-Assembled Wurtzite Gallium Nitride (GaN) Nanostructures by Chemical Vapor Deposition, J. Phys. Chem. C, 117, 7348 - 7357.
12. P. Sundara Venkatesh, and K. Jeganathan (2013): Investigations on the growth and characterization of vertically aligned zinc oxide nanowires by radio frequency magnetron sputtering, J. Solid State Chem., 200, 84 – 89.
13. P. Justin Jesuraj, and K. Jeganathan (2013): Surface defects impeded excitons in Alq3 based hetero junction OLEDs, Appl. Surf. Sci., 268, 323 – 326.
14. R. Parameshwari, P. Sai Teja, P. Sangeetha, V. Ramakrishnan, and K. Jeganathan (2013): Role of Deoxy Group on the High Concentration of Graphene in Surfactant / Water Media, RSC Advances, 3, 2369 – 2378.
15. V. Rajiu, P. Arunkumar, H. Kalpana, B. Preetham Kumar, K. Jeganathan, and K. Premkumar (2013):Doxorubicin Conjugated Gold Nanorods: A Sustained Drug Delivering Carrier for Improved Anticancer Therapy,J. Mater. Chem. B, 1, 1010 – 1018.
16. C. Gopalakrishnan, K. R. Ganesh, S. Ramaswamy, and K. Jeganathan (2012): Structural and Magnetic properties of Nickel catalyzed Tungsten oxide nanosheets synthesized using e-beam rapid thermal annealing,Mater. Chem. Phys., 137, 264 - 269.
17. V. Purushothaman, V. Ramakrishnan, and K. Jeganathan (2012): Whiskered GaN nanowires by self-induced VLS approach using chemical vapor deposition, CrystEngComm., 14, 8390-8395.
18. M. Gopalakrishnan, V. Purushothaman, P. Sundara Venkatesh, V. Ramakrishnan, and K. Jeganathan (2012):Structural and optical properties of GaN and InGaN nanoparticles by Chemical Co-precipitation method,Mater. Res. Bull., 47, 3323 - 3329.
19. K. Jeganathan, and V. Purushothaman (2012): GaN nanostructures by Chemical Vapour Deposition (cover page Image), Nano Today, 7, 3. SI
20. P. Sundara Venkatesh, V. Purushothaman, S. Esakki Muthu, S. Arumugam, V. Ramakrishnan, K. Jeganathan, and K. Ramamurthi (2012): Role of point defects on the enhancement of room temperature ferromagnetism in ZnO nanorods, CrystEngComm., 14, 4713 – 4718.
21. V. Gokulakrishnan, V. Purushothaman, E. Arthi, K. Jeganathan, and K. Ramamurthi (2012): Effect of vacuum annealing on the structural, optical and electrical properties of spray deposited Ga doped ZnO thin films,Physica Status Solidi (a), 209, 1481 - 1486.
22. P. Sundara Venkatesh, V. Ramakrishnan and K. Jeganathan (2012): Vertically aligned indium doped zinc oxide nanorods for the application of nanostructured anodes by radio-frequency magnetron sputtering,CrystEngComm., 14, 3907 - 3914.
23. V. Purushothaman, V. Ramakrishnan, and K. Jeganathan (2012): Interplay of VLS and VS growth mechanism for GaN nanowires by self-catalytic approach, RSC Advances, 2, 4802–4806.
24. V. Gokulakrishnan, S. Parthiban, E. Elangovan, K. Jeganathan, D. Kanjilal, K. Asokan, R. Martins, E. Fortunato, and K. Ramamurthi (2012): Investigation of O7+ swift heavy ion irradiation on molybdenum doped indium oxide thin films, Radiation Phys. Chem., 81, 589 - 593.
25. V. Gokulakrishnan, S. Parthiban, K. Jeganathan, and K. Ramamurthi (2011): Investigation of Molybdenum Doped ZnO Thin Films Prepared by Spray Pyrolysis Technique, Ferroelectrics, 423, 126 – 134.
26. V. Gokulakrishnan, S. Parthiban, K. Jeganathan, and K. Ramamurthi (2011): Structural, Optical, and Electrical Properties of Nb-Doped ZnO Thin Films Prepared by Spray Pyrolysis Method, J. Electron. Mater., 40, 2382 - 2387.
27. V. Gokulakrishnan, S. Parthiban, K. Jeganathan, and K. Ramamurthi (2011): Investigation on the effect of Zr doping in ZnO thin films by spray pyrolysis, Appl. Surf. Sci., 257, 9068– 9072.
28. V. Gokulakrishnan, S. Parthiban, E. Elangovan, K. Ramamurthi, K. Jeganathan, D. Kanjilal, K. Asokan, R. Martins, and E. Fortunato (2011): Effects of O7+ swift heavy ion irradiation on indium oxide thin films, Nucl. Instrum. Methods, 269, 1836 - 1840.
29. V. Gokulakrishnan, S. Parthiban, K. Jeganathan, and K. Ramamurthi (2011): Investigations on the structural, optical and electrical properties of Nb doped SnO2 thin films, J. Mater. Sci., 46, 5553 - 5558.
30. C. Gopalakrishnan, K.R. Ganesh, S. Ramaswamy, and K. Jeganathan (2011): Self-assembled tungsten oxide nanowires by electron beam assisted rapid thermal annealing, Mater. Lett., 95, 1941 - 1944.
31. D. Mubarak Ali, N.Thajuddin, K.Jeganathan, and M.Gunasekaran (2011): Plant extract mediated synthesis of silver and gold nanoparticles and its antibacterial activity against clinically isolated pathogens, Colloid. Surface. B, 85, 360 - 365.
32. T Gotschke, E O Schäfer-Nolte, R Caterino, F Limbach, T Stoica, E Sutter, K.Jeganathan, and R Calarco (2011):Properties of uniform diameter InN nanowires obtained under Si doping, Nanotechnology, 22, 125704.
33. R. Cuscó, N. Domènech-Amador, L. Artús, T. Gotschke, K. Jeganathan, T. Stoica, and R. Calarco (2010):Probing the electron density in undoped, Si-doped, and Mg-doped InN nanowires by means of Raman scattering, Appl. Phys. Lett., 97, 221906.
34. K. Jeganathan, V. Purushothaman, R. K. Debnath, R. Calarco, and H. Luth (2010): Raman scattering on intrinsic surface electron accumulation of InN nanowires, Appl. Phys. Lett., 97, 093104.
35. R. Kumaravel, S. Menaka, S. Regina Mary Snega, K. Ramamurthi and K. Jeganathan (2010): Electrical, optical and structural properties of aluminum doped cadmium oxide thin films prepared by spray pyrolysis technique,Mater. Chem. Phys., 122, 444 - 448.
36. S. Ramaswamy, C. Gopalakrishnan, K.R. Ganesh, K. Jeganathan, and M. Ponnavaikko (2010): Effects of argon ion bombardment on the structure and magnetic properties of ultrathin Fe films, J. Vac. Sci. Technol. B, 28, 795 - 798.
37. R. Kumaravel, V. Krishnakumar, V. Gokulakrishnan,, K. Ramamurthi, and K. Jeganathan (2010): Effect of annealing on the electrical, optical and structural properties of cadmium stannate thin films prepared by spray pyrolysis technique, Thin Solid Films,518, 2271 - 2274.
38. T. Richter, H. Lüth, Th. Schäpers, R. Meijers, K. Jeganathan, S. Estévez Hernández, R. Calarco, and M. Marso(2009): Electrical transport properties of single undoped and n-type doped InN nanowires, Nanotechnology,20, 405206.
39. K. Jeganathan, R. K. Debnath, R. Meijers, T. Stoica, R. Calarco, D. Grützmacher, and H. Lüth (2009): Raman scattering of phonon-plasmon coupled modes in self-assembled GaN nanowires, J. Appl. Phys., 105, 123707.
40. R.K. Debnath, T. Stoica, A. Besmehn, K. Jeganathan, E. Sutter, R. Meijers, H. Lüth, and R. Calarco (2009):Formation of GaN nanodots on Si (1 1 1) by droplet nitridation, J. Cryst. Growth, 311, 3389 - 3394.
41. R. K. Debnath, R. Meijers, K. Jeganathan, T. Richter, T. Stoica, R. Calarco, and H. Lüth (2008): Self-assembled growth of GaN nanowires, J. of Physics, 126, 012026.
42. K. Jeganathan, M. Shimizu, H. Okumura, Y. Yano, and N. Akutsu (2007): Lattice-matched InAlN/GaN two-dimensional electron gas with high mobility and sheet carrier density by plasma-assisted molecular beam epitaxy. J. Cryst. Growth, 304, 342 - 345.
43. K. Jeganathan (2005): Nanoislands reduce GaN epilayer defect densities, Compound semiconductor, 11, 32.
44. K. Jeganathan, M. Shimizu, and H. Okumura (2005): Reduction of dislocations in GaN epilayers using templated three- dimensional coherent nanoislands, Appl. Phys. Lett., 86, 191908.
45. K. Jeganathan, M. Shimizu, and H. Okumura (2005): High-density Self-assembled GaN nanoislands on SiC (0001) by rf-plasma MBE, Appl. Phys. Lett., 86, 073106.
46. K. Jeganathan, M. Shimizu, and H. Okumura (2005): Influence of the AlGaN buffer layer on the biaxial strain of GaN epilayer grown on 6H-SiC (0001) by molecular-beam epitaxy, J. Appl. Phys., 97, 013524.
47. K. Jeganathan, M. Shimizu, and H. Okumura (2004): Dynamically stable gallium-induced 3X3 SiC (0001) surface for two - dimensional GaN nucleation by molecular-beam epitaxy, J. Appl. Phys., 95, 3761 - 3764.
48. K. Jeganathan, M. Shimizu, T. Ide, and H. Okumura (2003): The effect of gallium adsorbate on SiC(0001) surface for GaN by MBE, Phys. Status Solidi (b), 240, 326- 329.
49. K. Jeganathan, T. Ide, M. Shimizu, and H. Okumura (2003): Two-dimensional electron gases induced by polarization charges in AlN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy, J. Appl. Phys., 94, 3260 - 3263.
50. B.R. Shim H. Okita, K. Jeganathan, M. Shimuzu, and H. Okumura (2003): Structural properties of GaN films with AlN buffer layers with varying growth temperatures by plasma-assisted molecular beam epitaxy, JPN. J. Appl. Phys., 42, 2265 - 2269.
51. K. Jeganathan, M. Shimuzu, H. Okumura, F. Hirose, and S. Nishizawa (2003): Initial stage of GaN nucleation on Ö3XÖ3 R30 degrees-Ga reconstructed 4H-SiC(0001)Si by molecular-beam epitaxy, Surf. Sci. 527, L197 - L202.
52. K. Jeganathan, T. Ide, M. Shimizu, and H. Okumura (2003): Strain relaxation correlated with the transport properties of AlN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy, J. Appl. Phys., 93, 2047 - 2050.
53. T. Ide, M. Shimizu, S. Hara, D. H. Cho, K. Jeganathan, X. Q. Shen, H. Okumura, and T. Nemoto (2002):Improvement of DC characteristics in AlGaN/GaN heterojunction field-effect transistors employing AlN spacer layer, JPN J. Appl. Phys., 41, 5563 - 5564.
54. T. Ide, M. Shimizu, X. Q. Shen, K. Jeganathan, H. Okumura, and T. Nemoto (2002): Improvement of film quality using Si-doping in AlGaN/GaN heterostructure grown by plasma-assisted molecular beam epitaxy, J. Cryst. Growth, 245, 15 - 20.
55. K. Jeganathan, M. Shimuzu, and H. Okumura (2002): Growth of Strain Free GaN Layers on 6H-SiC (0001) by Plasma-Assisted Molecular Beam Epitaxy, Phys. Status Solidi (c), 1, 143 –147.
56. K. Jeganathan, M. Shimuzu, T. Ide and H. Okumura (2002): Control of GaN surface morphologies grown on 6H-SiC (0001) using plasma-assisted molecular beam epitaxy, J. Cryst. Growth, 244, 33 - 38.
57. K. Jeganathan, X. Q. Shen, T. Ide, M. Shimizu, and H. Okumura (2002): High-quality GaN layers on c- plane sapphire substrates by plasma-assisted molecular-beam using double-step AlN buffer process, JPN. J. Appl. Phys. 41, 4454 - 4457.
58. K. Jeganathan, T. Kitamura, M. Shimizu, and H. Okumura (2002): High-quality growth of AlN epitaxial layer by plasma-assisted molecular-beam epitaxy, JPN. J. Appl. Phys., 41, L28 - L30.
59. K. Jeganathan, T. Ide, X. Q. Shen, M. Shimizu, and H. Okumura (2001): 2DEG characteristics of AlN/GaN heterointerface on sapphire substrates grown by plasma-assisted MBE. Phys. Status. Solidi (b), 228, 613 - 616.
60. K. Jeganathan, R.S.Q. Fareed, K. Baskar, P. Ramasamy, and J. Kumar (2000): Investigations on the undersaturated LPE growth of AlxGa1-xAs, J. Cryst. Growth, 212, 29 - 34.
61. K. Jeganathan, V. Ramakrishnan, and J. Kumar (1999): Raman scattering studies on the thin graded band gap AlGaAs hetero-epitaxial layer, Cryst. Res. Tech., 34, 1293 - 1298.
62. K. Jeganathan, C. Ferrari, and J. Kumar (1999): Structural characterisation of remelt liquid phase epitaxy (LPE) grown AlGaAs heteroepitaxial layer, J. Cryst. Growth, 203, 327 - 332.
63. S. Saravanan, K. Jeganathan, K. Baskar, and J. Kumar (1999): Investigations on the estimation of arsenic atoms and growth of GaAs epitaxial layers from bismuth solution, Mat. Sci. Eng. B-Adv., 58, 229 - 233.
64. K. Jeganathan, S. Saravanan, P. Ramasamy, and J. Kumar (1999): Effect of bismuth on liquid phase epitaxy (LPE) grown GaAs layer using Ga-As-Bi melt, J. Cryst. Growth, 200, 341 - 347.
65. S. Saravanan, K. Jeganathan, K. Baskar, T. Jimbo, T. Soga, and M. Umeno (1998): Crystal growth of high quality hybrid GaAs heteroepitaxial layers on Si substrate by metal organic chemical vapor deposition and liquid phase epitaxy, J. Cryst. Growth, 192, 23 - 27.
66. S. Saravanan, K. Jeganathan, J. Arokiaraj, K. Baskar, P. Ramasamy T. Jimbo, T. Soga, and M. Umeno (1998):Optical and structural quality of GaAs epilayers from gallium, bismuth mixed solvents by liquid phase epitaxy,JPN J. Appl. Phys., 37, 2598 - 2601.
67. K. Jeganathan, S. Saravanan, K. Baskar, and J. Kumar (1998): On the bismuth composition dependent concentration of arsenic atoms during LPE growth of GaAs layers from Ga-As-Bi solution, Phys. Status Solidi (a)165, 437 - 443.
68. S. Saravanan, K. Jeganathan, K. Baskar, J. Kumar, C. Subramanian, T. Soga, T. Jimbo, B. R. Arora and M. Umeno (1997): High quality GaAs epitaxial layers grown from Ga-As-Bi solutions by LPE, JPN J. Appl. Phys., 36, 3385 - 3388.
69. K. Jeganathan, S. Saravanan, K. Baskar, J. Kumar (1997): Investigations on the concentration profiles of arsenic atoms during phase epitaxial growth of GaAs from Ga-As-Bi solution, Mater. Chem. Phys., 49, 141 - 145.
1. R. N. Lokesh, L. Balakrishnan, K. Jeganathan, Samar Layek, H. C. Verma and N. Gopalakrishnan (2014): Role of surface functionalization in ZnO:Fe nanostructures, Mater. Sci. Eng. B, (In Press).
2. P. Sundara Venkatesh, S. Balakumar and K. Jeganathan (2014): Post annealing effects on the structural and optical properties of vertically aligned undoped ZnO nanorods grown by radio frequency magnetron sputtering, RSC Advances, 4, 5030–5035.
3. P. Sundara Venkatesh, C. L. Dong, C. L. Chen, W. F. Pong, K. Asokan and K. Jeganathan (2014): Local electronic structure of ZnO nanorods grown by radio frequency magnetron sputtering, Mater. Lett., 116, 206–208.
4. P. Jayabal, V. Sasirekha, J. Mayandi, K. Jeganathan, V. Ramakrishnan (2014): A facile hydrothermal synthesis of SrTiO3 for dye sensitized solar cell application, J. Alloy, Compd., 586, 456–461.
5. C. Gopalakrishnana, S. Ramaswamy, K. R. Ganesh, and K. Jeganathan (2014): Influence of low energy Ar-ion bombardment on monolayer Ni/W(100), Physica E, 56, 337–341.
6. P. Sundara Venkatesh, V. Ramakrishnan, and K. Jeganathan (2013): Investigations on the growth of manifold morphologies and optical properties of ZnO nanostructures by radio frequency magnetron sputtering, AIP Advances, 3, 082133.
7. P. Dharmaraj, K. Jeganathan, V. Gokulakrishnan, P. Sundara Venkatesh, R. Parameshwari, V. Ramakrishnan, S. Balakumar, K. Asokan, and K. Ramamurthi (2013): Controlled and Selective Area Growth of Mono Layer Graphene on 4H-SiC Substrate by Electron Beam Assisted Rapid Heating, J. Phys. Chem. C, 117, 19195−19202 SI
8. P. Sangeetha, K. Jeganathan, and V. Ramakrishnan (2013): Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111) substrate, AIP Advances, 3, 062114.
9. V. Purushothaman, and K. Jeganathan (2013): Investigations on the role of Ni-catalyst for the VLS growth of quasi-aligned GaN nanowires by chemical vapor deposition, J. Nanopart. Res., 15, 1789.
10. P. Sundara Venkatesh, V. Ramakrishnan, and K. Jeganathan (2013): Investigations on the growth and optical properties of one dimensional ZnO nanostructures grown by radio frequency magnetron sputter deposition,Mater. Res. Bull., 48, 3811 - 3816.
11. V. Purushothaman, and K. Jeganathan (2013): Structural Evolution and Growth Mechanism of Self-Assembled Wurtzite Gallium Nitride (GaN) Nanostructures by Chemical Vapor Deposition, J. Phys. Chem. C, 117, 7348 - 7357.
12. P. Sundara Venkatesh, and K. Jeganathan (2013): Investigations on the growth and characterization of vertically aligned zinc oxide nanowires by radio frequency magnetron sputtering, J. Solid State Chem., 200, 84 – 89.
13. P. Justin Jesuraj, and K. Jeganathan (2013): Surface defects impeded excitons in Alq3 based hetero junction OLEDs, Appl. Surf. Sci., 268, 323 – 326.
14. R. Parameshwari, P. Sai Teja, P. Sangeetha, V. Ramakrishnan, and K. Jeganathan (2013): Role of Deoxy Group on the High Concentration of Graphene in Surfactant / Water Media, RSC Advances, 3, 2369 – 2378.
15. V. Rajiu, P. Arunkumar, H. Kalpana, B. Preetham Kumar, K. Jeganathan, and K. Premkumar (2013):Doxorubicin Conjugated Gold Nanorods: A Sustained Drug Delivering Carrier for Improved Anticancer Therapy,J. Mater. Chem. B, 1, 1010 – 1018.
16. C. Gopalakrishnan, K. R. Ganesh, S. Ramaswamy, and K. Jeganathan (2012): Structural and Magnetic properties of Nickel catalyzed Tungsten oxide nanosheets synthesized using e-beam rapid thermal annealing,Mater. Chem. Phys., 137, 264 - 269.
17. V. Purushothaman, V. Ramakrishnan, and K. Jeganathan (2012): Whiskered GaN nanowires by self-induced VLS approach using chemical vapor deposition, CrystEngComm., 14, 8390-8395.
18. M. Gopalakrishnan, V. Purushothaman, P. Sundara Venkatesh, V. Ramakrishnan, and K. Jeganathan (2012):Structural and optical properties of GaN and InGaN nanoparticles by Chemical Co-precipitation method,Mater. Res. Bull., 47, 3323 - 3329.
19. K. Jeganathan, and V. Purushothaman (2012): GaN nanostructures by Chemical Vapour Deposition (cover page Image), Nano Today, 7, 3. SI
20. P. Sundara Venkatesh, V. Purushothaman, S. Esakki Muthu, S. Arumugam, V. Ramakrishnan, K. Jeganathan, and K. Ramamurthi (2012): Role of point defects on the enhancement of room temperature ferromagnetism in ZnO nanorods, CrystEngComm., 14, 4713 – 4718.
21. V. Gokulakrishnan, V. Purushothaman, E. Arthi, K. Jeganathan, and K. Ramamurthi (2012): Effect of vacuum annealing on the structural, optical and electrical properties of spray deposited Ga doped ZnO thin films,Physica Status Solidi (a), 209, 1481 - 1486.
22. P. Sundara Venkatesh, V. Ramakrishnan and K. Jeganathan (2012): Vertically aligned indium doped zinc oxide nanorods for the application of nanostructured anodes by radio-frequency magnetron sputtering,CrystEngComm., 14, 3907 - 3914.
23. V. Purushothaman, V. Ramakrishnan, and K. Jeganathan (2012): Interplay of VLS and VS growth mechanism for GaN nanowires by self-catalytic approach, RSC Advances, 2, 4802–4806.
24. V. Gokulakrishnan, S. Parthiban, E. Elangovan, K. Jeganathan, D. Kanjilal, K. Asokan, R. Martins, E. Fortunato, and K. Ramamurthi (2012): Investigation of O7+ swift heavy ion irradiation on molybdenum doped indium oxide thin films, Radiation Phys. Chem., 81, 589 - 593.
25. V. Gokulakrishnan, S. Parthiban, K. Jeganathan, and K. Ramamurthi (2011): Investigation of Molybdenum Doped ZnO Thin Films Prepared by Spray Pyrolysis Technique, Ferroelectrics, 423, 126 – 134.
26. V. Gokulakrishnan, S. Parthiban, K. Jeganathan, and K. Ramamurthi (2011): Structural, Optical, and Electrical Properties of Nb-Doped ZnO Thin Films Prepared by Spray Pyrolysis Method, J. Electron. Mater., 40, 2382 - 2387.
27. V. Gokulakrishnan, S. Parthiban, K. Jeganathan, and K. Ramamurthi (2011): Investigation on the effect of Zr doping in ZnO thin films by spray pyrolysis, Appl. Surf. Sci., 257, 9068– 9072.
28. V. Gokulakrishnan, S. Parthiban, E. Elangovan, K. Ramamurthi, K. Jeganathan, D. Kanjilal, K. Asokan, R. Martins, and E. Fortunato (2011): Effects of O7+ swift heavy ion irradiation on indium oxide thin films, Nucl. Instrum. Methods, 269, 1836 - 1840.
29. V. Gokulakrishnan, S. Parthiban, K. Jeganathan, and K. Ramamurthi (2011): Investigations on the structural, optical and electrical properties of Nb doped SnO2 thin films, J. Mater. Sci., 46, 5553 - 5558.
30. C. Gopalakrishnan, K.R. Ganesh, S. Ramaswamy, and K. Jeganathan (2011): Self-assembled tungsten oxide nanowires by electron beam assisted rapid thermal annealing, Mater. Lett., 95, 1941 - 1944.
31. D. Mubarak Ali, N.Thajuddin, K.Jeganathan, and M.Gunasekaran (2011): Plant extract mediated synthesis of silver and gold nanoparticles and its antibacterial activity against clinically isolated pathogens, Colloid. Surface. B, 85, 360 - 365.
32. T Gotschke, E O Schäfer-Nolte, R Caterino, F Limbach, T Stoica, E Sutter, K.Jeganathan, and R Calarco (2011):Properties of uniform diameter InN nanowires obtained under Si doping, Nanotechnology, 22, 125704.
33. R. Cuscó, N. Domènech-Amador, L. Artús, T. Gotschke, K. Jeganathan, T. Stoica, and R. Calarco (2010):Probing the electron density in undoped, Si-doped, and Mg-doped InN nanowires by means of Raman scattering, Appl. Phys. Lett., 97, 221906.
34. K. Jeganathan, V. Purushothaman, R. K. Debnath, R. Calarco, and H. Luth (2010): Raman scattering on intrinsic surface electron accumulation of InN nanowires, Appl. Phys. Lett., 97, 093104.
35. R. Kumaravel, S. Menaka, S. Regina Mary Snega, K. Ramamurthi and K. Jeganathan (2010): Electrical, optical and structural properties of aluminum doped cadmium oxide thin films prepared by spray pyrolysis technique,Mater. Chem. Phys., 122, 444 - 448.
36. S. Ramaswamy, C. Gopalakrishnan, K.R. Ganesh, K. Jeganathan, and M. Ponnavaikko (2010): Effects of argon ion bombardment on the structure and magnetic properties of ultrathin Fe films, J. Vac. Sci. Technol. B, 28, 795 - 798.
37. R. Kumaravel, V. Krishnakumar, V. Gokulakrishnan,, K. Ramamurthi, and K. Jeganathan (2010): Effect of annealing on the electrical, optical and structural properties of cadmium stannate thin films prepared by spray pyrolysis technique, Thin Solid Films,518, 2271 - 2274.
38. T. Richter, H. Lüth, Th. Schäpers, R. Meijers, K. Jeganathan, S. Estévez Hernández, R. Calarco, and M. Marso(2009): Electrical transport properties of single undoped and n-type doped InN nanowires, Nanotechnology,20, 405206.
39. K. Jeganathan, R. K. Debnath, R. Meijers, T. Stoica, R. Calarco, D. Grützmacher, and H. Lüth (2009): Raman scattering of phonon-plasmon coupled modes in self-assembled GaN nanowires, J. Appl. Phys., 105, 123707.
40. R.K. Debnath, T. Stoica, A. Besmehn, K. Jeganathan, E. Sutter, R. Meijers, H. Lüth, and R. Calarco (2009):Formation of GaN nanodots on Si (1 1 1) by droplet nitridation, J. Cryst. Growth, 311, 3389 - 3394.
41. R. K. Debnath, R. Meijers, K. Jeganathan, T. Richter, T. Stoica, R. Calarco, and H. Lüth (2008): Self-assembled growth of GaN nanowires, J. of Physics, 126, 012026.
42. K. Jeganathan, M. Shimizu, H. Okumura, Y. Yano, and N. Akutsu (2007): Lattice-matched InAlN/GaN two-dimensional electron gas with high mobility and sheet carrier density by plasma-assisted molecular beam epitaxy. J. Cryst. Growth, 304, 342 - 345.
43. K. Jeganathan (2005): Nanoislands reduce GaN epilayer defect densities, Compound semiconductor, 11, 32.
44. K. Jeganathan, M. Shimizu, and H. Okumura (2005): Reduction of dislocations in GaN epilayers using templated three- dimensional coherent nanoislands, Appl. Phys. Lett., 86, 191908.
45. K. Jeganathan, M. Shimizu, and H. Okumura (2005): High-density Self-assembled GaN nanoislands on SiC (0001) by rf-plasma MBE, Appl. Phys. Lett., 86, 073106.
46. K. Jeganathan, M. Shimizu, and H. Okumura (2005): Influence of the AlGaN buffer layer on the biaxial strain of GaN epilayer grown on 6H-SiC (0001) by molecular-beam epitaxy, J. Appl. Phys., 97, 013524.
47. K. Jeganathan, M. Shimizu, and H. Okumura (2004): Dynamically stable gallium-induced 3X3 SiC (0001) surface for two - dimensional GaN nucleation by molecular-beam epitaxy, J. Appl. Phys., 95, 3761 - 3764.
48. K. Jeganathan, M. Shimizu, T. Ide, and H. Okumura (2003): The effect of gallium adsorbate on SiC(0001) surface for GaN by MBE, Phys. Status Solidi (b), 240, 326- 329.
49. K. Jeganathan, T. Ide, M. Shimizu, and H. Okumura (2003): Two-dimensional electron gases induced by polarization charges in AlN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy, J. Appl. Phys., 94, 3260 - 3263.
50. B.R. Shim H. Okita, K. Jeganathan, M. Shimuzu, and H. Okumura (2003): Structural properties of GaN films with AlN buffer layers with varying growth temperatures by plasma-assisted molecular beam epitaxy, JPN. J. Appl. Phys., 42, 2265 - 2269.
51. K. Jeganathan, M. Shimuzu, H. Okumura, F. Hirose, and S. Nishizawa (2003): Initial stage of GaN nucleation on Ö3XÖ3 R30 degrees-Ga reconstructed 4H-SiC(0001)Si by molecular-beam epitaxy, Surf. Sci. 527, L197 - L202.
52. K. Jeganathan, T. Ide, M. Shimizu, and H. Okumura (2003): Strain relaxation correlated with the transport properties of AlN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy, J. Appl. Phys., 93, 2047 - 2050.
53. T. Ide, M. Shimizu, S. Hara, D. H. Cho, K. Jeganathan, X. Q. Shen, H. Okumura, and T. Nemoto (2002):Improvement of DC characteristics in AlGaN/GaN heterojunction field-effect transistors employing AlN spacer layer, JPN J. Appl. Phys., 41, 5563 - 5564.
54. T. Ide, M. Shimizu, X. Q. Shen, K. Jeganathan, H. Okumura, and T. Nemoto (2002): Improvement of film quality using Si-doping in AlGaN/GaN heterostructure grown by plasma-assisted molecular beam epitaxy, J. Cryst. Growth, 245, 15 - 20.
55. K. Jeganathan, M. Shimuzu, and H. Okumura (2002): Growth of Strain Free GaN Layers on 6H-SiC (0001) by Plasma-Assisted Molecular Beam Epitaxy, Phys. Status Solidi (c), 1, 143 –147.
56. K. Jeganathan, M. Shimuzu, T. Ide and H. Okumura (2002): Control of GaN surface morphologies grown on 6H-SiC (0001) using plasma-assisted molecular beam epitaxy, J. Cryst. Growth, 244, 33 - 38.
57. K. Jeganathan, X. Q. Shen, T. Ide, M. Shimizu, and H. Okumura (2002): High-quality GaN layers on c- plane sapphire substrates by plasma-assisted molecular-beam using double-step AlN buffer process, JPN. J. Appl. Phys. 41, 4454 - 4457.
58. K. Jeganathan, T. Kitamura, M. Shimizu, and H. Okumura (2002): High-quality growth of AlN epitaxial layer by plasma-assisted molecular-beam epitaxy, JPN. J. Appl. Phys., 41, L28 - L30.
59. K. Jeganathan, T. Ide, X. Q. Shen, M. Shimizu, and H. Okumura (2001): 2DEG characteristics of AlN/GaN heterointerface on sapphire substrates grown by plasma-assisted MBE. Phys. Status. Solidi (b), 228, 613 - 616.
60. K. Jeganathan, R.S.Q. Fareed, K. Baskar, P. Ramasamy, and J. Kumar (2000): Investigations on the undersaturated LPE growth of AlxGa1-xAs, J. Cryst. Growth, 212, 29 - 34.
61. K. Jeganathan, V. Ramakrishnan, and J. Kumar (1999): Raman scattering studies on the thin graded band gap AlGaAs hetero-epitaxial layer, Cryst. Res. Tech., 34, 1293 - 1298.
62. K. Jeganathan, C. Ferrari, and J. Kumar (1999): Structural characterisation of remelt liquid phase epitaxy (LPE) grown AlGaAs heteroepitaxial layer, J. Cryst. Growth, 203, 327 - 332.
63. S. Saravanan, K. Jeganathan, K. Baskar, and J. Kumar (1999): Investigations on the estimation of arsenic atoms and growth of GaAs epitaxial layers from bismuth solution, Mat. Sci. Eng. B-Adv., 58, 229 - 233.
64. K. Jeganathan, S. Saravanan, P. Ramasamy, and J. Kumar (1999): Effect of bismuth on liquid phase epitaxy (LPE) grown GaAs layer using Ga-As-Bi melt, J. Cryst. Growth, 200, 341 - 347.
65. S. Saravanan, K. Jeganathan, K. Baskar, T. Jimbo, T. Soga, and M. Umeno (1998): Crystal growth of high quality hybrid GaAs heteroepitaxial layers on Si substrate by metal organic chemical vapor deposition and liquid phase epitaxy, J. Cryst. Growth, 192, 23 - 27.
66. S. Saravanan, K. Jeganathan, J. Arokiaraj, K. Baskar, P. Ramasamy T. Jimbo, T. Soga, and M. Umeno (1998):Optical and structural quality of GaAs epilayers from gallium, bismuth mixed solvents by liquid phase epitaxy,JPN J. Appl. Phys., 37, 2598 - 2601.
67. K. Jeganathan, S. Saravanan, K. Baskar, and J. Kumar (1998): On the bismuth composition dependent concentration of arsenic atoms during LPE growth of GaAs layers from Ga-As-Bi solution, Phys. Status Solidi (a)165, 437 - 443.
68. S. Saravanan, K. Jeganathan, K. Baskar, J. Kumar, C. Subramanian, T. Soga, T. Jimbo, B. R. Arora and M. Umeno (1997): High quality GaAs epitaxial layers grown from Ga-As-Bi solutions by LPE, JPN J. Appl. Phys., 36, 3385 - 3388.
69. K. Jeganathan, S. Saravanan, K. Baskar, J. Kumar (1997): Investigations on the concentration profiles of arsenic atoms during phase epitaxial growth of GaAs from Ga-As-Bi solution, Mater. Chem. Phys., 49, 141 - 145.